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Modulating Surface Morphology and Thin-Film Transistor Performance of Bi-thieno[3,4‑c]pyrrole-4,6-dione-Based Polymer Semiconductor by Altering Preaggregation in Solution
journal contribution
posted on 2018-08-16, 18:25 authored by Guangcheng Ouyang, Hongzhuo Wu, Xiaolan Qiao, Jidong Zhang, Hongxiang LiDue to their strong
intermolecular interactions, polymer semiconductors
aggregate in solution even at elevated temperature. With the aim to
study the effect of this kind preaggregation on the order of thin
films and further transistor performance, bi-thieno[3,4-c]pyrrole-4,6-dione and fluorinated oligothiophene copolymerized polymer
semiconductor P1, which shows strong temperature-dependent
aggregation behavior in solution, is synthesized. Its films are deposited
through a temperature-controlled dip-coating technique. X-ray diffraction
and atomic force microscopy results reveal that the aggregation behavior
of P1 in solution affects the microstructures and order
of P1 films. The charge transport properties of P1 films are investigated with bottom-gate top-contacted thin-film
transistors. The variation of device performance (from 0.014
to 1.03 cm2 V–1 s–1) demonstrates the importance of optimizing preaggregation degree.
The correlation between preaggregation degree and transistor performance
of P1 films is explored.
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P 1 filmssolutioncharge transport propertiesoligothiophene copolymerized polymer semiconductor P 1force microscopy resultspreaggregation degreepyrroleModulating Surface MorphologyThin-Film Transistor Performancebottom-gate top-contacted thin-film transistorstemperature-controlled dip-coating techniquetemperature-dependent aggregation behaviortransistor performance
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