posted on 2018-01-18, 00:00authored byDaniele Meggiolaro, Edoardo Mosconi, Filippo De Angelis
Understanding
the defect chemistry of lead-halide perovskites is
of paramount importance to further progress toward exploitation of
these materials. Here, we combine recent experimental observations
on the behavior of MAPbI3 upon exposure to I2 vapor with first-principles calculations to extract a global picture
of defect chemistry in lead-halide perovskites. By matching the reported
experimental observables we disclose the origin of the p-doping observed
upon exposing MAPbI3 to I2 and highlight its
consequences on the charge and ion transport and trapping activity.
Electron/hole traps related to positive/negative interstitial iodine
dominate the defect chemistry in intrinsic conditions, while in p-doped
MAPbI3, electrons are mainly trapped by positive interstitial
iodine and neutral lead vacancies. I2 spontaneously dissociates
on iodine vacancies, leading to vacancy passivation and to the formation
of positive interstitial iodine. I2 spontaneously dissociates
on nondefective MAPbI3(001) surfaces to form pairs of negative/positive
interstitial iodine. Upon trapping a hole/electron pair at negative/positive
interstitial iodine, I2 release becomes thermodynamically
favored, possibly representing a photoinduced trap-curing mechanism.