posted on 2021-11-22, 23:31authored byZhebin Fu, Takuya Hirai, Hiroshi Onishi
Conversion of materials
for artificial photosynthesis is completed
in milliseconds or seconds by assembling atoms over semiconductor
photocatalysts. Band-gap-excited electrons and holes reactive on this
time scale are key for efficient atom assembly to yield the desired
products. In this study, attenuated total reflection of infrared (IR)
light was applied to characterize the electronic absorption of long-life
charge carriers excited under water. Under excitation, NaTaO3 and KTaO3 photocatalyst particles doped with Sr or La
cations absorbed IR light. A broad absorption band appeared with a
maximum at 1400 cm–1, which was enhanced by the
addition of hole scavengers (e.g., methanol and Na2SO3) and disappeared in the presence of electron scavengers (e.g.,
FeCl3, NaIO3, and H2O2). This absorption corresponded to the electronic transition of band-gap-excited
electrons accommodated in mid-gap states. In anaerobic n-decane, the electron absorption was enhanced by the excitation light
power, P, with absorbance being proportional to P1/2. The observed 1/2-order power law suggested
deexcitation via recombination of electrons and holes. When the excitation
light was stopped, the absorbance decreased as a function of time
with a second-order rate law, as expected in the case of recombinative
deexcitation. In addition, the 1/2-order power law and second-order
decay rate law were observed in anaerobic water, with an accelerated
decay rate, which was possibly due to a water-related electron-consuming
reaction. This study demonstrated that long-life electrons contribute
to surface redox reactions over semiconductor photocatalysts for artificial
photosynthesis.