Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor
journal contributionposted on 11.01.2018, 00:00 by Jun-Young Park, Byung-Hyun Lee, Geon-Beom Lee, Hagyoul Bae, Yang-Kyu Choi
This work investigates localized electrothermal annealing (ETA) with extremely low power consumption. The proposed method utilizes, for the first time, tunneling-current-induced Joule heat in a p-i-n diode, consisting of p-type, intrinsic, and n-type semiconductors. The consumed power used for dopant control is the lowest value ever reported. A metal-oxide-semiconductor field-effect transistor (MOSFET) composed of a p-i-n silicon nanowire, which is a substructure of a tunneling FET (TFET), was fabricated and utilized as a test platform to examine the annealing behaviors. A more than 2-fold increase in the on-state (ION) current was achieved using the ETA. Simulations are conducted to investigate the location of the hot spot and how its change in heat profile activates the dopants.
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p-typedopant controlp-i-n diodeETALocalized Electrothermal Annealingtest platformannealing behaviorsMOSFETheat profile activateslocationp-i-n silicon nanowiren-type semiconductorsmethodtunneling-current-induced Joule heatsubstructuretunneling FETNanowatt PowerTFETpower consumption2-Simulationon-statemetal-oxide-semiconductor field-effect transistorelectrothermal annealingSilicon Nanowire Field-Effect Transistor