an8b00123_si_001.pdf (1.17 MB)
Download fileLocalized-State-Dependent Electroluminescence from ZnO/ZnS Core–Shell Nanowires–GaN Heterojunction
journal contribution
posted on 30.03.2018, 00:00 authored by Ruxue Li, Zhipeng Wei, Xuan Fang, Yanbin Wang, Yongfeng Li, Dengkui Wang, Jilong Tang, Dan Fang, Xueying Chu, Bin Yao, Rui Chen, Xiaohua WangZnO is a very important
material for excitonic ultraviolet optoelectronic
devices operating above room temperature due to its wide band gap
and high exciton binding energy. In this paper, the influences of
different degrees of the localized state on the photoluminescence
and electroluminescence properties of the ZnO/ZnS core–shell
nanowires–GaN heterojunction are systematically discussed.
The physical model for radiative recombination of localized carriers
was proposed to explain these phenomena. Our results indicate that
surface-coating of ZnS nanoparticles on ZnO nanowires (NWs) is one
of the effective ways to manipulate the localized states, and only
the appropriate localized state will result in the optimal optoelectronic
properties.