Herein,
the electrical characteristics, photoelectric
properties,
resistive switching (RS) mechanism, and flexible storage application
of Ag/PMMA&Mn:CsPbCl3/ITO (PMMA = poly(methyl methacrylate))
devices are studied by using the photoelectric material Mn:CsPbCl3 nanocrystals (NCs) embedded in PMMA as the RS layer. The
devices exhibit bipolar RS behavior with low operating voltage, excellent
cycling endurance (>1000 times), long retention time (≥104 s), high ON/OFF ratio (≈104), and good
environmental stability. The flexible memory devices have demonstrated
reliable mechanical stability of consecutive 1000 bending cycles.
In addition, multilevel data storage is realized by introducing the
UV light, and the adjustive resistive switching characteristics is
achieved through photoelectric synergistic work. The resistive switching
mechanism under the excitation of light has been studied comprehensively.
This work may pave a new way for developing the next generation of
high-density data storage and photoelectric memristor.