posted on 2020-10-20, 17:24authored byYasir J. Noori, Shibin Thomas, Sami Ramadan, Danielle E. Smith, Vicki K. Greenacre, Nema Abdelazim, Yisong Han, Richard Beanland, Andrew L. Hector, Norbert Klein, Gillian Reid, Philip N. Bartlett, C. H. Kees de Groot
Heterostructures
involving two-dimensional (2D) transition metal
dichalcogenides and other materials such as graphene have a strong
potential to be the fundamental building block of many electronic
and optoelectronic applications. The integration and scalable fabrication
of such heterostructures are of the essence in unleashing the potential
of these materials in new technologies. For the first time, we demonstrate
the growth of few-layer MoS2 films on graphene via nonaqueous
electrodeposition. Through methods such as scanning and transmission
electron microscopy, atomic force microscopy, Raman spectroscopy,
energy- and wavelength-dispersive X-ray spectroscopies, and X-ray
photoelectron spectroscopy, we show that this deposition method can
produce large-area MoS2 films with high quality and uniformity
over graphene. We reveal the potential of these heterostructures by
measuring the photoinduced current through the film. These results
pave the way toward developing the electrodeposition method for the
large-scale growth of heterostructures consisting of varying 2D materials
for many applications.