Intrinsic Current−Voltage Characteristics of Graphene Nanoribbon Transistors and Effect of Edge Doping
journal contributionposted on 02.04.2020, 14:37 by Qimin Yan, Bing Huang, Jie Yu, Fawei Zheng, Ji Zang, Jian Wu, Bing-Lin Gu, Feng Liu, Wenhui Duan
We demonstrate that the electronic devices built on patterned graphene nanoribbons (GNRs) can be made with atomic-perfect-interface junctions and controlled doping via manipulation of edge terminations. Using first-principles transport calculations, we show that the GNR field effect transistors can achieve high performance levels similar to those made from single-walled carbon nanotubes, with ON/OFF ratios on the order of 103−104, subthreshold swing of 60 meV per decade, and transconductance of 9.5 × 103 Sm-1.
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Smsingle-walled carbon nanotubesGNR field effect transistorsdopingEdge Dopingratioatomic-perfect-interface junctionssubthreshold swing60 meVfirst-principles transport calculationsIntrinsic9.5Graphene Nanoribbon Transistorsmanipulationdevicegraphene nanoribbonsedge terminationsCharacteristicsperformance levelstransconductance