posted on 2017-12-19, 00:00authored byMohammad Karimi, Magnus Heurlin, Steven Limpert, Vishal Jain, Xulu Zeng, Irene Geijselaers, Ali Nowzari, Ying Fu, Lars Samuelson, Heiner Linke, Magnus T. Borgström, Håkan Pettersson
Semiconductor
nanowires have great potential for realizing broadband
photodetectors monolithically integrated with silicon. However, the
spectral range of such detectors has so far been limited to selected
regions in the ultraviolet, visible, and near-infrared regions. Here,
we report on the first intersubband nanowire heterostructure array
photodetectors exhibiting a spectrally resolved photoresponse from
the visible to long-wavelength infrared. In particular, the infrared
response from 3 to 20 μm is enabled by intersubband transitions
in low-bandgap InAsP quantum discs synthesized axially within InP
nanowires. The intriguing optical characteristics, including unexpected
sensitivity to normal incident radiation, are explained by excitation
of the longitudinal component of optical modes in the photonic crystal
formed by the nanostructured portion of the detectors. Our results
provide a generalizable insight into how broadband nanowire photodetectors
may be designed and how engineered nanowire heterostructures open
up new, fascinating opportunities for optoelectronics.