posted on 2018-03-21, 00:00authored byDongliang Bai, Jingru Zhang, Zhiwen Jin, Hui Bian, Kang Wang, Haoran Wang, Lei Liang, Qian Wang, Shengzhong Frank Liu
It
is imperative to develop a large-aspect-ratio grain-based thin
film with low trap density for high-performance inorganic perovskite
CsPbI2Br solar cells. Herein, by using Mn2+ ion
doping to modulate film growth, we achieved CsPbI2Br grains
with aspect ratios as high as 8. It is found that Mn2+ ions
insert into the interstices of the CsPbI2Br lattice during
the growth process, leading to suppressed nucleation and a decreased
growth rate. The combination aids in the achievement of larger CsPbI2Br crystalline grains for increased JSC values as high as 14.37 mA/cm2 and FFs as large
as 80.0%. Moreover, excess Mn2+ ions passivate the grain
boundary and surface defects, resulting in effectively decreased recombination
loss with improved hole extraction efficiency, which enhances the
built-in electric field and hence increases VOC to 1.172 V. As a result, the champion device achieves stabilized
efficiency as high as 13.47%, improved by 13% compared with only 11.88%
for the reference device.