It
is known that dewetting of a polystyrene (PS) thin film on a
silicon substrate gets completely suppressed upon addition of small
amount of C60 nanoparticles (NP). The NPs migrate to the film–substrate interface and forms
an enriched surface layer of the particles that eventually stabilizes
the film by apparent pinning. In this article we quantitatively highlight
the unexplored effect of substrate surface energy (γS) on the migration of the NPs to the film–substrate interface
and their contribution on dewetting suppression. Depending on the
relative magnitudes of NP concentration (CNP) and γS, we identify three distinct stability regimes.
In regime 1 (CNP < 0.2%) there is no
suppression of dewetting and the final polygonal arrangement of droplets
closely resemble dewetted structures in particle free films. However,
the size of the polygons becomes smaller in NP containing films when
γS < γC60 (NP surface energy)
and larger as γS exceeds γC60. In
regime 2 (0.3% < CNP < 0.75%) the
films dewet partially, and the extent of dewetting is seen to strongly
dependent on the relative magnitudes of γC60 and
γS. While dewetting proceeds up to the stage of partial
hole growth and coalescence when γS < γC60, some random isolated holes are seen to form when γS > γC60. On the basis of direct AFM imaging,
we show that in both regimes 1 and 2 the NPs migrate to the substrate–film
interface only when γS > γC60. We
show complete suppression of dewetting in regime 3 (CNP > 1.0%), where the particles are seen to migrate
to
the substrate for all values of γS. The work highlights
that entropy driven migration of particles takes place on substrates
with any γS only above a critical NP concentration
(CNPC) and only on substrates with γS > γC60 when CNP < CNPC. The findings, apart from
dewetting suppressing, can guide potential design criteria for applications
such as electron extracting layer in organic photovoltaic.