Comprehensive
understanding and precise manipulation of the crystallization
process for organic–inorganic hybrid perovskite materials are
crucial for advancing perovskite single-crystal optoelectronic technology.
In this study, we theoretically and experimentally investigated the
influence of interface tension on the synthesis of perovskite single
crystals. On the basis of the understanding of the nucleation and
growth mechanisms, we developed a polydimethylsiloxane-assisted temperature-gradient
growth technique to prepare high-quality MAPbBr3 single
crystals. Using this technique, we harvested some high-quality MAPbBr3 single crystals, with the narrowest reported full width at
half-maximum (0.00806°) of X-ray diffraction rocking curve, the
longest carrier lifetime of 1002 ns, and an ultralow trap-state density
of 4.25 × 109 cm–3. Furthermore,
the X-ray detector fabricated using our MAPbBr3 single
crystal exhibited a high sensitivity of 7275 μC Gy1– cm2 and a low minimum detection limit of 0.67 μGy
s–1. This paper presents a novel method to control
the crystallization and growth processes of high-quality perovskite
single crystals.