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Download fileIntercalation of Thin-Film Gd-Doped Ceria Barrier Layers in Electrolyte-Supported Solid Oxide Cells: Physicochemical Aspects
journal contribution
posted on 2021-07-28, 12:04 authored by Matthias Riegraf, Feng Han, Noriko Sata, Rémi CostaTo minimize alteration
of the La0.6Sr0.4Co0.2Fe0.8O3−δ (LSCF)/Gd0.2Ce0.8O2−δ(CGO20)/Y0.06Zr0.94O2−δ(3YSZ) interface
via strontium zirconate formation in solid oxide cells, electron beam
physical vapor deposition was employed to manufacture dense, thin
gadolinium-doped ceria (CGO) interlayers. CGO layers with thicknesses
of 0.15, 0.3, and 0.5 μm were integrated in state-of-the-art
5 × 5 cm2-large electrolyte-supported cells, and their
performance characteristics and degradation behavior were investigated.
Electrochemical impedance spectroscopy measurements are correlated
with a postmortem scanning electron microscopy/energy-dispersive X-ray
spectroscopy analysis to show that 0.15 μm-thick layers lead
to the formation of a continuous Sr-containing secondary phase at
the CGO/YSZ interface, likely related to the formation of a SrO–ZrO2 phase. Major performance losses were confirmed by an increase
in both Ohmic and polarization resistance with an increase in the
frequency region ∼103 Hz. Cells with 0.3 μm-
and 0.5 μm-thick CGO layers showed similar high performance
and low degradation rates over a testing period of ∼800 h.
The YSZ/CGO interface of the cells with a 0.3 μm-thick CGO layer
showed the formation of a discontinuous Sr-containing secondary phase;
however, performance losses were still successfully prevented. Furthermore,
it is observed that 0.5 μm-thick CGO layers were sufficient
to suppress the formation of the Sr-containing secondary phase.
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Major performance lossesPhysicochemical AspectsCGO layers0.5 μ m-thick CGO layersElectrochemical impedance spectrosc...0.3 μ m-thick CGO layerelectron beamYSZdegradation ratesThin-Film Gd-Doped Ceria Barrier Layerselectrolyte-supported cellsperformance lossesSr-containinginterfacegadolinium-doped ceriatesting periodperformance characteristicsLSCFvapor deposition0.5 μ moxide cellspolarization resistancedegradation behavior0.15 μ m-thick layersOxide Cellsphasestrontium zirconate formation0.3 μ m