Influence of Sulfur Evaporation during or after KF-Post Deposition Treatment On Cu(In,Ga)Se2/CdS Interface Formation
journal contributionposted on 05.10.2020, 20:32 by Sylvie Harel, Ludovic Arzel, Thomas Lepetit, Pawel Zabierowski, Nicolas Barreau
This work investigates the impact of the elemental sulfur evaporation during or after KF-post deposition treatment (KF-PDT) on the resulting Cu(In,Ga)Se2/chemical bath deposited(CBD)-CdS interface. Chemical composition of the various interfaces were determined through Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and X-ray induced Auger spectroscopy (XAES). Cu(In,Ga)Se2 absorber which experienced KF-PDT in selenium atmosphere (KSe sample) exhibits the formation of the well-reported In–Se based topping layer. Additional exposure to elemental sulfur, resulting in KSe+S sample, induces the partial sulfurization of this overlayer and/or of the absorber. After short immersion into the CdS bath, the resulting In-rich surfaces of KSe and KSe+S are likely to turn into few atomic layers of Cd–In–(Se/S)–O whose [S]/[Se]+[S] ratio and O content depend on their respective post deposition treatment. In contrast, KF-PDT performed in S atmosphere does not show an In-rich surface, making the early stage of CdS growth similar to that observed on untreated CIGSe.
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chemical compositionIn-rich surfaceAuger spectroscopyKF-PDTpost deposition treatmentS atmosphereXPSSulfur EvaporationKF-post deposition treatmentRaman spectroscopyXAESinterfaceKSe sampleIn-rich surfacesKF-Post Deposition Treatmentsulfur evaporationCuAdditional exposureCdS bathabsorberCdS growthO contentX-ray photoelectron spectroscopyselenium atmosphere