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Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS2
journal contributionposted on 2020-05-01, 20:03 authored by Mina Maruyama, Kosuke Nagashio, Susumu Okada
Atomic layer materials with semiconducting electronic properties have attracted much attention as conducting channels in field-effect transistors (FETs). Here, we investigate the electronic structures of bilayer MoS2 in a dual-gate FET model using first-principles total-energy calculations based on density functional theory (DFT). Our calculations show that selective electron doping occurs in bilayer MoS2 under a perpendicular electric field owing to a band offset between the positive and negative-electrode sides of the MoS2 layers. Furthermore, we observe a further partial carrier distribution in bilayer MoS2 by decreasing the interlayer interaction owing to a twisted stacking arrangement. It is expected that the positive-electrode-side layer works as a conducting channel, and on the other hand, the negative-electrode-side layer works as a screening layer in bilayer MoS2-FETs.
MoS 2 layersnegative-electrode-side layer worksinterlayer interactionelectron dopingfield-effect transistorsnegative-electrode sidesGate-Induced Carrier AccumulationBilayer MoS 2 Atomic layer materialscalculations showdual-gate FET modelDFTscreening layerInterlayer Stackingpositive-electrode-side layer worksfirst-principles total-energy calculationscarrier distributionbilayer MoS 2