posted on 2023-07-08, 13:03authored byJunfei Chen, Atefeh Ghorbani, Dong Seob Chung, Mohsen Azadinia, Tyler Davidson-Hall, Peter Chun, Quan Lyu, Giovanni Cotella, Dandan Song, Zheng Xu, Hany Aziz
Encapsulating
blue quantum dot light-emitting devices (QLEDs) using
an ultraviolet curable resin is known to lead to a significant increase
in their efficiency. Some of this efficiency increase occurs immediately,
whereas some of it proceeds over a period of time, typically over
several tens of hours following the encapsulation, a behavior commonly
referred to as positive aging. The root causes of this positive aging,
especially in blue QLEDs, remain not well understood. Here, it is
revealed that contrary to the expectation, the significant improvement
in device efficiency during positive aging arises primarily from an
improvement in electron injection across the QD/ZnMgO interface and
not due to the inhibition of interface exciton quenching as is widely
believed. The underlying changes are investigated by XPS measurements.
Results show that the enhancement in device performance arises primarily
from the reduction in O-related defects in both the QDs and ZnMgO
at the QD/ZnMgO interface. After 51.5 h, the blue QLEDs reach the
optimal performance, exhibiting an EQEmax of 12.58%, which
is more than sevenfold higher than that in the control device without
encapsulation. This work provides design principles for realizing
high efficiency in blue QLEDs with oxide electron-transporting layers
(ETLs) and provides a new understanding of the mechanisms underlying
positive aging in these devices and thus offers a new starting point
for both fundamental investigations and practical applications.