The rapidly growing
demand for fast information storage and processing
has driven the development of resistive random access memories (RRAMs).
Recently, RRAMs based on organometal halide perovskite materials have
been reported to have promising memory properties, which are essential
for next-generation memory devices. In this study, a hybrid two-dimensional/three-dimensional
(2D/3D) perovskite heterostructure has been created by depositing n-butylammonium iodide on top of the CH3NH3PbI3–xClx (MAPbI3–xClx) surface. The perovskite film is fabricated by a
facile one-step spin-coating method with room-temperature molten salt
methylammonium acetate in the air. Resistive switching memory devices
with a 2D/3D perovskite heterostructure exhibit a significantly improved
switching window (ON/OFF ratio over 103) with a lower operation
voltage compared with their 3D counterparts. The 2D/3D perovskite
heterostructure is advantageous for fabricating uniform-crystalline-grain,
highly compact structures and can passivate defect states for the
MAPbI3–xClx film and the interface, which results in improved memory properties.
These results provide a new perspective for developing high-performance
perovskite-based memory devices.