posted on 2021-02-16, 22:29authored byHyunjin Kim, Seohyun Maeng, Soobin Lee, Jaekyun Kim
Solution-processed
indium gallium tin oxide (InGaSnO, IGTO) thin
film transistors (TFTs) are investigated as promising low-cost and
stable materials for high-performance amorphous oxide semiconductor
(AOS)-based TFTs in display applications. After tailoring the metal
cation composition in IGTO thin films, the IGTO (7:1:1) AOS TFT shows
a saturation mobility and current on/off ratio of 2.13 cm2 V–1 s–1 and 2.55 × 107, superior to the IGZO TFT. It was found that the threshold
voltage (Vth) shifts of IGTO TFTs with
higher Sn molar ratios became gradually diminished both under the
positive bias stress (PBS) test, from +7.3 to +1.1 V, and under the
negative bias stress (NBS) test, from −2.83 to −0.94
V, due to the increased concentration of Sn–O complexes with
relatively higher bonding energies within IGTO thin films. X-ray photoelectron
spectroscopy (XPS) analysis also reveals that IGTO thin films with
higher Sn composition ratio tend to effectively suppress the formation
of oxygen vacancy, which consequently led to the improved stability
of IGTO-based TFTs under the gate bias stress. Therefore, these results
can be the basis for improving the characteristics of IGTO semiconducting
channel systems for low-cost switching devices in the display applications.