posted on 2017-12-18, 00:00authored byDaehwan Jung, Zeyu Zhang, Justin Norman, Robert Herrick, M. J. Kennedy, Pari Patel, Katherine Turnlund, Catherine Jan, Yating Wan, Arthur C. Gossard, John E. Bowers
Quantum
dot lasers epitaxially grown on Si are promising for an
efficient light source for silicon photonics. Recently, considerable
progress has been made to migrate 1.3 μm quantum dot lasers
from off-cut Si to on-axis (001) Si substrates. Here, we report significantly
improved performance and reliability of quantum dot lasers enabled
by a low threading dislocation density GaAs buffer layer. Continuous-wave
threshold currents as low as 6.2 mA and output powers of 185 mW have
been achieved at 20 °C. Reliability tests after 1500 h at 35 °C
showed an extrapolated mean-time-to-failure of more than a million
hours. Direct device transparency and amplified spontaneous emission
measurements reveal an internal optical loss as low as 2.42 cm–1 and injection efficiency of 87%. This represents
a significant stride toward efficient, scalable, and reliable III–V
lasers on on-axis Si substrates for photonic integrate circuits that
are fully compatible with CMOS foundries.