Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density
journal contributionposted on 15.08.2016, 00:00 authored by Ahmed Al-Haddad, Chengliang Wang, Haoyuan Qi, Fabian Grote, Liaoyong Wen, Jörg Bernhard, Ranjith Vellacheri, Samar Tarish, Ghulam Nabi, Ute Kaiser, Yong Lei
Resistive switching random access memories (RRAM) have attracted great scientific and industrial attention for next generation data storage because of their advantages of nonvolatile properties, high density, low power consumption, fast writing/erasing speed, good endurance, and simple and small operation system. Here, by using a template-assisted technique, we demonstrate a three-dimensional highly ordered vertical RRAM device array with density as high as that of the nanopores of the template (108–109 cm–2), which can also be fabricated in large area. The high crystallinity of the materials, the large contact area and the intimate semiconductor/electrode interface (3 nm interfacial layer) make the ultralow voltage operation (millivolt magnitude) and ultralow power consumption (picowatt) possible. Our procedure for fabrication of the nanodevice arrays in large area can be used for producing many other different materials and such three-dimensional electronic device arrays with the capability to adjust the device densities can be extended to other applications of the next generation nanodevice technology.
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generation data storagedensityaccess memoriesdevice densitiesmaterialRRAM device arraynonvolatile propertiesnanodevice arraysHighly-Ordered 3 D Vertical Resistive Switching Memory Arraysmillivolt magnitudepower consumptiongeneration nanodevice technologytemplate-assisted techniqueUltralow Power Consumptiondevice arraysoperation systemcontact areaUltrahigh Density Resistiveultralow voltage operationultralow power consumption