American Chemical Society
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High-Resolution Three-Dimensional Mapping of Semiconductor Dopant Potentials

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journal contribution
posted on 2020-04-03, 17:36 authored by Alison C. Twitchett-Harrison, Timothy J. V. Yates, Simon B. Newcomb, Rafal E. Dunin-Borkowski, Paul A. Midgley
Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under “working conditions”. Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.