High-Performance 1D–2D Te/MoS₂ Heterostructure Photodetectors with Tunable Giant Persistent Photoconductivity

This study presents vertically stacked van der Waals heterojunctions comprising multilayered tellurium (Te) and exfoliated molybdenum disulfide (MoS₂) for high-performance broadband phototransistors exhibiting tunable giant persistent photoconductivity. The type I heterojunction configuration significantly enhances and broadens spectral responsivity due to its large absorption cross section and optimal band alignment. The photodetector achieves a relatively excellent responsivity of 209 A/W and a high detectivity of 3.4 × 10¹³ under visible wavelength irradiation as well as a comparable responsivity of 10 A/W under infrared wavelength. Notably, the giant persistent photoconductivity in this architecture can be modulated by the drain voltage (V_DS) and the wavelength of the incident light. This work paves the way for high-performance, heterostructured TMDC-based futuristic optoelectronic applications.