High-Detectivity and Broadband Photodetector Based on LiInP₂Se₆ Semiconductors

Photodetectors with high-detectivity and broadband response have attracted tremendous interest in various optoelectronic applications. LiInP₂Se₆ as an emerging 2D semiconductor exhibits significant potential in optoelectronic applications due to its suitable bandgap and low dark current. Herein, high-quality LiInP₂Se₆ crystals were successfully grown by the chemical vapor transport (CVT) method, and LiInP₂Se₆-based photodetectors were fabricated with a typical metal–semiconductor–metal (MSM) structure. The photodetectors present outstanding performance with a high detectivity of 9.48 × 10¹² Jones and a large on/off ratio coming up to 10² under 532 nm illumination. Furthermore, the photoresponse wavelength range can be expanded from visible to near-infrared (NIR) due to defect engineering, indicating the potential to realize broadband photodetection. These results demonstrate LiInP₂Se₆ as an emerging 2D semiconductor for optoelectronic applications and a promising candidate for photodetection with high detectivity and broadband response.