posted on 2019-08-30, 00:13authored byTomohiro Matsui, Hideki Sato, Kazuma Kita, André E.
B. Amend, Hiroshi Fukuyama
We
studied, by scanning tunneling microscopy, the morphology of
nanopits of monolayer depth created at graphite surfaces by hydrogen-plasma
etching under various conditions such as H2 pressure, temperature,
etching time, and RF power of the plasma generation. In addition to
the known pressure-induced transition of the nanopit morphology, we
found a sharp temperature-induced transition from many small rather
round nanopits of ∼150 nm size to few large hexagonal ones
of 300–600 nm within a narrow temperature range. The remote
and direct plasma modes switching mechanism, which was proposed to
explain the pressure-induced transition, is not directly applicable
to this newly found transition. Scanning tunneling spectroscopy (STS)
measurements of edges of the hexagonal nanopits fabricated at graphite
surfaces by this method show clear signatures of the peculiar electronic
state localized at the zigzag edge (the edge state), indicating that
the hexagonal nanopits consist of a high density of zigzag edges.
The present study will pave the way for microscopic understanding
of the anisotropic etching mechanism and of spin polarization in zigzag
nanoribbons which are promising key elements for future graphene nanoelectronics.