posted on 2016-01-26, 00:00authored byTaeshik Yoon, Jae-Han Kim, Jun Hyung Choi, Dae Yool Jung, Ick-Joon Park, Sung-Yool Choi, Nam Sung Cho, Jeong-Ik Lee, Young-Duck Kwon, Seungmin Cho, Taek-Soo Kim
Graphene produced by chemical-vapor-deposition
inevitably has defects
such as grain boundaries, pinholes, wrinkles, and cracks, which are
the most significant obstacles for the realization of superior properties
of pristine graphene. Despite efforts to reduce these defects during
synthesis, significant damages are further induced during integration
and operation of flexible and stretchable applications. Therefore,
defect healing is required in order to recover the ideal properties
of graphene. Here, the electrical and mechanical properties of graphene
are healed on the basis of selective electrochemical deposition on
graphene defects. By exploiting the high current density on the defects
during the electrodeposition, metal ions such as silver and gold can
be selectively reduced. The process is universally applicable to conductive
and insulating substrates because graphene can serve as a conducting
channel of electrons. The physically filled metal on the defects improves
the electrical conductivity and mechanical stretchability by means
of reducing contact resistance and crack density. The healing of graphene
defects is enabled by the solution-based room temperature electrodeposition
process, which broadens the use of graphene as an engineering material.