American Chemical Society
jp7b09998_si_001.pdf (487.02 kB)

Growth of Porous Anodic Alumina on Low-Index Surfaces of Al Single Crystals

Download (487.02 kB)
journal contribution
posted on 2017-11-22, 00:00 authored by Ilya V. Roslyakov, Dmitry S. Koshkodaev, Andrei A. Eliseev, Daniel Hermida-Merino, Vladimir K. Ivanov, Andrei V. Petukhov, Kirill S. Napolskii
The pseudoepitaxial growth of amorphous anodic alumina with ordered porous structure within single crystal grains of aluminum substrates is an amazing feature of the self-organization process, which occurs during anodization. Here, we used single crystal Al(100), Al(110), and Al(111) substrates to inspect the effect of aluminum crystallography on anodization rates and the morphology of the resulting alumina films grown under different anodization conditions. The difference in the kinetics of porous film growth on various substrates is described in terms of the activation barrier of aluminum atom release from the metal surface to the oxide layer. Scanning electron microscopy and small-angle X-ray scattering are applied for quantitative characterization of different kinds of ordering in anodic alumina films. The highest number of straight channels was found in porous anodic alumina grown on Al(100) substrates, whereas Al(111) was proved to induce the best orientational order in anodic alumina with the formation of the single-domain-like structures. Based on the obtained results, possible pathways for crystallographic control of the anodic alumina porous structure for different practical applications are discussed.