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Green Electroluminescence from Radial m‑Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

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journal contribution
posted on 2018-10-16, 00:00 authored by Akanksha Kapoor, Nan Guan, Martin Vallo, Agnes Messanvi, Lorenzo Mancini, Eric Gautier, Catherine Bougerol, Bruno Gayral, Francois H. Julien, François Vurpillot, Lorenzo Rigutti, Maria Tchernycheva, Joël Eymery, Christophe Durand
We demonstrate green emission from InGaN/GaN multiple quantum wells (MQWs) grown on m-plane sidewalls of GaN wires. To tune the emission wavelength, InGaN radial wells were grown by metal–organic vapor phase epitaxy (MOVPE) at decreasing temperatures ranging from 710 down to 620 °C to increase the In incorporation. A comprehensive investigation combining structural and optical analyses demonstrates that the green emission from the nonpolar m-plane wire sidewalls is achieved for the wells grown at 650 °C (namely, for 2.7 nm thick wells sandwiched by 11 nm thick GaN barriers). The observed emission wavelength of 500–550 nm is consistent with an average In-content of MQWs measured in the range of 24 ± 4% by energy dispersive X-ray (EDX) and atom probe tomography (APT). Single wires were electrically contacted and the green electroluminescence from m-plane facets was established on single wire-LED devices. This demonstrates the possibility to produce green emitters with core–shell wire LEDs elaborated by industrial and scalable MOVPE technique.

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