The
most pressing barrier for the development of advanced electronics
based on two-dimensional (2D) layered semiconductors stems from the
lack of site-selective synthesis of complementary n- and p-channels
with low contact resistance. Here, we report an in-plane epitaxial
route for the growth of interlaced 2D semiconductor monolayers using
chemical vapor deposition with a gas-confined scheme, in which patterned
graphene (Gr) serves as a guiding template for site-selective growth
of Gr–WS2–Gr and Gr–WSe2–Gr heterostructures. The Gr/2D semiconductor interface exhibits
a transparent contact with a nearly ideal pinning factor of 0.95 for
the n-channel WS2 and 0.92 for the p-channel WSe2. The effective depinning of the Fermi level gives an ultralow contact
resistance of 0.75 and 1.20 kΩ·μm for WS2 and WSe2, respectively. Integrated logic circuits including
inverter, NAND gate, static random access memory, and five-stage ring
oscillator are constructed using the complementary Gr–WS2–Gr–WSe2–Gr heterojunctions
as a fundamental building block, featuring the prominent performance
metrics of high operation frequency (>0.2 GHz), low-power consumption,
large noise margins, and high operational stability. The technology
presented here provides a speculative look at the electronic circuitry
built on atomic-scale semiconductors in the near future.