American Chemical Society
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GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

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journal contribution
posted on 2018-10-19, 11:20 authored by Daniela Stange, Nils von den Driesch, Thomas Zabel, Francesco Armand-Pilon, Denis Rainko, Bahareh Marzban, Peter Zaumseil, Jean-Michel Hartmann, Zoran Ikonic, Giovanni Capellini, Siegfried Mantl, Hans Sigg, Jeremy Witzens, Detlev Grützmacher, Dan Buca
GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source offering a number of design options from bulk to heterostructures and quantum wells. Here, we investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect. Three complex heterostructures were grown on top of 200 nm thick strain-relaxed Ge0.9Sn0.1 buffers. The lasing is investigated in terms of threshold and maximal lasing operation temperature by comparing multiple quantum well to double heterostructure samples. Pumping under two different wavelengths of 1064 and 1550 nm yields comparable lasing thresholds. The design with multi quantum wells reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures. Moreover, 20 K higher maximal lasing temperatures were found for lower energy pumping of 1550 nm.