posted on 2015-01-14, 00:00authored byBabak Fallahazad, Kayoung Lee, Sangwoo Kang, Jiamin Xue, Stefano Larentis, Christopher Corbet, Kyounghwan Kim, Hema C. P. Movva, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Sanjay K. Banerjee, Emanuel Tutuc
We demonstrate gate-tunable resonant
tunneling and negative differential resistance in the interlayer current–voltage
characteristics of rotationally aligned double bilayer graphene heterostructures
separated by hexagonal boron nitride (hBN) dielectric. An analysis
of the heterostructure band alignment using individual layer densities,
along with experimentally determined layer chemical potentials indicates
that the resonance occurs when the energy bands of the two bilayer
graphene are aligned. We discuss the tunneling resistance dependence
on the interlayer hBN thickness, as well as the resonance width dependence
on mobility and rotational alignment.