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Gate-Tunable and Programmable n‑InGaAs/Black Phosphorus Heterojunction Diodes

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journal contribution
posted on 11.06.2019, 00:00 by Youngsu Lee, Doo-Seung Um, Seongdong Lim, Hochan Lee, Minsoo P. Kim, Tzu-Yi Yang, Yu-Lun Chueh, Hyung-jun Kim, Hyunhyub Ko
Semiconductor heterostructures have enabled numerous applications in diodes, photodetectors, junction field-effect transistors, and memory devices. Two-dimensional (2D) materials and III–V compound semiconductors are two representative materials providing excellent heterojunction platforms for the fabrication of heterostructure devices. The marriage between these semiconductors with completely different crystal structures may enable a new heterojunction with unprecedented physical properties. In this study, we demonstrate a multifunctional heterostructure device based on 2D black phosphorus and n-InGaAs nanomembrane semiconductors that exhibit gate-tunable, photoresponsive, and programmable diode characteristics. The device exhibits clear rectification with a large gate-tunable forward current, which displays rectification and switching with a maximum rectification ratio of 4600 and an on/off ratio exceeding 105, respectively. The device also offers nonvolatile memory properties, including large hysteresis and stable retention of storage charges. By combining the memory and gate-tunable rectifying properties, the rectification ratio of the device can be controlled and memorized from 0.06 to 400. Moreover, the device can generate three different electrical signals by combining a photoresponsivity of 0.704 A/W with the gate-tunable property, offering potential applications, for example, multiple logic operator. This work presents a heterostructure design based on 2D and III–V compound semiconductors, showing unique physical properties for the development of multifunctional heterostructure devices.

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