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Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus
journal contribution
posted on 2017-02-14, 00:00 authored by Yanpeng Liu, Zhizhan Qiu, Alexandra Carvalho, Yang Bao, Hai Xu, Sherman J. R. Tan, Wei Liu, A. H. Castro Neto, Kian Ping Loh, Jiong LuTwo-dimensional black
phosphorus
(BP) has sparked enormous research interest due to its high carrier
mobility, layer-dependent direct bandgap and outstanding in-plane
anisotropic properties. BP is one of the few two-dimensional materials
where it is possible to tune the bandgap over a wide energy range
from the visible up to the infrared. In this article, we report the
observation of a giant Stark effect in electrostatically gated few-layer
BP. Using low-temperature scanning tunnelling microscopy, we observed
that in few-layer BP, when electrons are injected, a monotonic reduction
of the bandgap occurs. The injected electrons compensate the existing
defect-induced holes and achieve up to 35.5% bandgap modulation in
the light-doping regime. When probed by tunnelling spectroscopy, the
local density of states in few-layer BP shows characteristic resonance
features arising from layer-dependent sub-band structures due to quantum
confinement effects. The demonstration of an electrical gate-controlled
giant Stark effect in BP paves the way to designing electro-optic
modulators and photodetector devices that can be operated in a wide
electromagnetic spectral range.
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Keywords
quantum confinement effectsbandgapgiant Stark effectlayer-dependent sub-band structuresGate-Tunable Giant Stark Effectscanning tunnelling microscopyFew-Layer Black Phosphorus Two-dimensionalfew-layer BPelectrostatically gated few-layer BPgate-controlled giant Stark effectin-plane anisotropic properties
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