posted on 2024-01-30, 04:08authored byGuanghui Zhang, Zenghui Yang, Xiaoshi Li, Shuairong Deng, Yang Liu, Hang Zhou, Maoyang Peng, Zhengping Fu, Rui Chen, Dechao Meng, Le Zhong, Quanfeng Zhou, Su-Huai Wei
The performance of integrated circuits (ICs) deteriorates
under
irradiation. It is commonly believed that passive components in the
IC such as through-silicon vias (TSVs) are insensitive to radiation
damages. However, we find a counterexample by studying the effect
of gamma-ray irradiation on a TSV, where its alternating current (AC)
properties change significantly due to an emerging dielectric loss
peak after irradiation, and the peak shifts toward lower frequencies
at higher radiation doses. We propose a mechanism of the observed
irradiation effect on the AC properties based on correlations between
macroscopic and microscopic phenomena, and the emerging dielectric
loss peak is attributed to the formation of a layer of border oxide
traps (BTs). The defect-based analysis indicates that the AC dielectric
loss due to gamma-ray irradiation is not restricted to TSVs but should
also be applicable to other semiconductor devices with Si/SiO2 interfaces. Our work provides not only an approach for the
quantitative characterization of BTs but also a practical approach
to resist AC irradiation damage at the circuit or material level.