Gallium-Doped Tin Oxide Nano-Cuboids for Improved Dye Sensitized Solar Cell

Tin dioxide (SnO₂) is a potential candidate to replace conventional titanium dioxide (TiO₂) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO₂ suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO₂, and we show that DSSCs using a Ga-doped SnO₂ nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).