GaAs Quantum Dot in a Parabolic Microcavity Tuned to 87Rb D1
journal contributionposted on 24.12.2019, 21:06 authored by Thomas Lettner, Katharina D. Zeuner, Eva Schöll, Huiying Huang, Selim Scharmer, Saimon Filipe Covre da Silva, Samuel Gyger, Lucas Schweickert, Armando Rastelli, Klaus D. Jöns, Val Zwiller
We develop a structure to efficiently extract photons emitted by a GaAs quantum dot tuned to rubidium. For this, we employ a broadband microcavity with a curved gold backside mirror that we fabricate by a combination of photoresist reflow, dry reactive ion etching in an inductively coupled plasma, and selective wet chemical etching. Precise reflow and etching control allows us to achieve a parabolic backside mirror with a short focal distance of 265 nm. The fabricated structures yield a predicted (measured) collection efficiency of 63% (12%), an improvement by more than 1 order of magnitude compared to unprocessed samples. We then integrate our quantum dot parabolic microcavities onto a piezoelectric substrate capable of inducing a large in-plane biaxial strain. With this approach, we tune the emission wavelength by 0.5 nm/kV, in a dynamic, reversible, and linear way, to the rubidium D1 line (795 nm).
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87 Rb D 1rubidiumreactive ion etchingparabolic backside mirroretching controlbroadband microcavitycollection efficiencyunprocessed samplesin-plane biaxial strainphotoresist reflowgold backside mirrorGaAs quantum dotemission wavelengthParabolic Microcavity Tunedquantum dot parabolic microcavitiesPrecise reflowchemical etching265 nm1 orderGaAs Quantum Dot