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Flexible Nanoporous WO3–x Nonvolatile Memory Device

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journal contribution
posted on 02.08.2016, 00:00 by Yongsung Ji, Yang Yang, Seoung-Ki Lee, Gedeng Ruan, Tae-Wook Kim, Huilong Fei, Seung-Hoon Lee, Dong-Yu Kim, Jongwon Yoon, James M. Tour
Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3–x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3–x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼105. The device also showed stable retention time over 5 × 105 s, outstanding cell-to-cell uniformity, and bending endurance over 103 cycles when measured in both the flat and the maximum bending conditions.

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