Flexible oxide sheets exhibiting
ferroelectricity and high permittivity
are crucial for the advancement of various emerging technologies.
However, achieving large-area crack-free flexible oxide sheets remains
difficult because oxides easily crack when their thicknesses are significantly
reduced. In this study, we focused on Ba1–xSrxTiO3 (BST), which
is an important material owing to its high permittivity and electric-field-induced
tunability. By employing an amorphous AlOx protective layer with a thickness greater than 10 nm, we successfully
fabricated millimeter-sized crack-free BST epitaxial sheets. In contrast,
the sheets fabricated without protective layers exhibited breakage.
In addition, we observed that a polycrystalline indium tin oxide layer
acted as a suitable bottom electrode. The BST sheet with a composition
of x = 0.25 exhibited excellent ferroelectric switching
behavior and minimal current leakage, even when used with electrodes
with a diameter of 100 μm. Furthermore, the BST sheet with a
composition of x = 0.5 simultaneously exhibited high
permittivity (εr ∼ 3500 at 10 kHz) and tunability
(56%), combining the desirable characteristics of both bulk and thin-film
materials. These improved dielectric properties are attributed to
the absence of substrate-induced strain, which is a characteristic
not observed in thin-film materials.