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Fabrication of Sub-50-nm Solid-State Nanostructures on the Basis of Dip-Pen Nanolithography

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journal contribution
posted on 14.12.2002, 00:00 by Hua Zhang, Sung-Wook Chung, Chad A. Mirkin
The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12−100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.