posted on 2020-08-27, 22:29authored byChungryong Choi, Junho Jang, So Yeong Park, Jaeyong Lee, Jin Kon Kim
Block
copolymers (BCPs) with various types of nanodomains have
potential application to next-generation nanolithography and storage
media because of relatively low cost and time-saving process. To obtain
complicated and sophisticated devices with nanolithography by using
a BCP template, the control of the nanopattern of BCP at a desired
area must be achieved. Here, we introduce a simple method to fabricate
a dual nanopattern by spatial control of nanodomain orientation in
polystyrene-block-poly(methyl methacrylate) copolymer
(PS-b-PMMA) thin films. Because most silicon substrates
used in semiconductor manufacturing have a natural oxide layer (SiOx) on the surface, the hydrophilic PMMA block
is preferred over the hydrophobic PS block. This results in parallel
orientation of lamellar (and cylindrical) nanodomains of PS-b-PMMA thin films. We found that when the SiOx layer was removed by hydrofluoric acid (HF), which
is termed “passivated silicon substrate”, its surface
tension became the middle of PS and PMMA blocks, resulting in vertical
orientation of lamellar (and cylindrical) nanodomains in thin films.
When we used photoresist (PR) prepatterns on the substrate, followed
by HF treatment at a selective area, dual nanopatterns consisting
of parallel and vertical oriented cylinders were successfully prepared
at a desired area. Finally, we fabricated a silicon substrate containing
both nanoholes and nanostripes at a desired region by a simple reactive
ion etching.