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Experimental Optical Properties of Single Nitrogen Vacancy Centers in Silicon Carbide at Room Temperature
journal contribution
posted on 2020-07-02, 15:10 authored by Jun-Feng Wang, Zheng-Hao Liu, Fei-Fei Yan, Qiang Li, Xin-Ge Yang, Liping Guo, Xiong Zhou, Wei Huang, Jin-Shi Xu, Chuan-Feng Li, Guang-Can GuoRobust
single spin color centers in solid state systems with telecom
wavelength emission are vital to quantum photonics and quantum networks.
The nitrogen vacancy (NV) centers in silicon carbide (SiC) have become
promising platforms for those applications. However, little is known
about the detailed optical properties of the NV centers. In this paper,
we investigate the photophysics of the single NV centers in 4H-SiC.
The results demonstrate that the NV centers comprise three energy-level
electronic structures. Particularly, for c-axis NV
centers, both the excitation and the emission polarization degrees
are larger than 90%. Photon purity and photostability of the single
NV centers are maintained at an elevated temperature up to 400 K.
These experiments constitute an important step toward using the NV
centers in SiC with respect to quantum photonics.
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