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Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature

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journal contribution
posted on 17.12.2015, 03:09 by Daniel J. R. Appleby, Nikhil K. Ponon, Kelvin S. K. Kwa, Bin Zou, Peter K. Petrov, Tianle Wang, Neil M. Alford, Anthony O’Neill
Effective negative capacitance has been postulated in ferroelectrics because there is a hysteresis in plots of polarization-electric field. Compelling experimental evidence of effective negative capacitance is presented here at room temperature in engineered devices, where it is stabilized by the presence of a paraelectric material. In future integrated circuits, the incorporation of such negative capacitance into MOSFET gate stacks would reduce the subthreshold slope, enabling low power operation and reduced self-heating.

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