Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
journal contributionposted on 09.06.2020, 19:11 by Matteo Cavalieri, Éamon O’Connor, Carlotta Gastaldi, Igor Stolichnov, Adrian M. Ionescu
In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 °C, which show ferroelectric behavior after annealing at 450 °C, compatible with complementary metal-oxide-semiconductor back-end-of-line processing. The material’s ferroelectricity is confirmed by microstructural and electrical analysis, corroborated by hysteretic electromechanical response measured via piezoresponse force microscopy. The effect of postdeposition annealing ambient is also studied, where N2 annealing results in higher remanent polarization, while O2 annealing yields greater endurance properties. Furthermore, ferroelectricity is demonstrated for PLD thin films formed on a conventional TiN/Si structure, demonstrating the strong potential of this PLD material for cointegration in relevant memory and logic applications.
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Experimental InvestigationPLD materialN 2 annealing resultsferroelectricitypostdeposition annealing ambientlaser depositionpiezoresponse force microscopyremanent polarizationmetal-oxide-semiconductor back-end-of-line processingCMOS BEOL Compatible Processlogic applicationsendurance propertiesGdO 2 annealing yieldsPulsed Laser Deposition