posted on 2024-06-27, 18:36authored byJingwei Zhang, Yani Liu, Qian Gao, Kang Xu, Zhongfei Xu, Weichang Hao, Zhenpeng Hu, Jincheng Zhuang, Yi Du
Two-dimensional
materials with layered structures, appropriate
band gaps, and high carrier mobility have attracted tremendous interest
for their potential applications. Here we report the growth of monolayer
SnP3 on Au(111) surfaces by molecular beam epitaxy. The
kinetic processes for the growth and the crystalline properties are
studied by scanning tunneling microscopy. The weak interaction between
SnP3 and its Au(111) substrate is signified by the random
crystal orientation distributions of SnP3 nanosheets. The
electronic structures exhibit a band gap of ∼0.25 eV and high
charge carrier mobility comparable to that of black phosphorus engineered
by compressive strain. Additionally, domain boundary junctions with
opposite chirality are observed, resulting from the strained film
in the epitaxial growth process. Our work provides a method to fabricate
high-quality monolayer SnP3 and suggests that the monolayer
SnP3 is a promising candidate for applications in nanoelectronics
and optoelectronics.