Epitaxial Growth of β‑Ga2O3 Thin Films on Si with YSZ Buffer Layer
journal contributionposted on 24.11.2022, 15:05 authored by Hyung-Jin Choi, Jun Young Lee, Soo Young Jung, Ruiguang Ning, Min-Seok Kim, Sung-Jin Jung, Sung Ok Won, Seung-Hyub Baek, Ji-Soo Jang
We report the epitaxial growth of (2̅01)-oriented β-Ga2O3 thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga2O3 thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of β-Ga2O3 thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial (2̅01) β-Ga2O3 thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic β-Ga2O3 and cubic YSZ. The results provide a pathway to integrate epitaxial β-Ga2O3 thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics.
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