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Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires

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journal contribution
posted on 22.07.2016, 00:00 by Xingqiang Liu, Xiaonian Yang, Guoyun Gao, Zhenyu Yang, Haitao Liu, Qiang Li, Zheng Lou, Guozhen Shen, Lei Liao, Caofeng Pan, Zhong Lin Wang
We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W–1, with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W–1 and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.