Enhanced Stability and Efficiency for Photoelectrochemical Iodide Oxidation by Methyl Termination and Electrochemical Pt Deposition on n-Type Si Microwire Arrays

Arrays of Si microwires doped n-type (n-Si) and surface-functionalized with methyl groups have been used, with or without deposition of Pt electrocatalysts, to photoelectrochemically oxidize I^–(aq) to I₃^–(aq) in 7.6 M HI­(aq). Under conditions of iodide oxidation, methyl-terminated n-Si microwire arrays exhibited stable short-circuit photocurrents over a time scale of days, albeit with low energy-conversion efficiencies. In contrast, electrochemical deposition of Pt onto methyl-terminated n-Si microwire arrays consistently yielded energy-conversion efficiencies of ∼2% for iodide oxidation, with an open-circuit photovoltage of ∼400 mV and a short-circuit photocurrent density of ∼10 mA cm^–2 under 100 mW cm^–2 of simulated air mass 1.5G solar illumination. Platinized electrodes were stable for >200 h of continuous operation, with no discernible loss of Si or Pt. Pt deposited using electron-beam evaporation also resulted in stable photoanodic operation of the methyl-terminated n-Si microwire arrays but yielded substantially lower photovoltages than when Pt was deposited electrochemically.