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Enhanced Shubnikov–De Haas Oscillation in Nitrogen-Doped Graphene

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journal contribution
posted on 28.07.2015, 00:00 by Han-Chun Wu, Mourad Abid, Ye-Cun Wu, Cormac Ó Coileáin, Askar Syrlybekov, Jun Feng Han, Cheng Lin Heng, Huajun Liu, Mohamed Abid, Igor Shvets
N-doped graphene displays many interesting properties compared with pristine graphene, which makes it a potential candidate in many applications. Here, we report that the Shubnikov–de Haas (SdH) oscillation effect in graphene can be enhanced by N-doping. We show that the amplitude of the SdH oscillation increases with N-doping and reaches around 5k Ω under a field of 14 T at 10 K for highly N-doped graphene, which is over 1 order of magnitude larger than the value found for pristine graphene devices with the same geometry. Moreover, in contrast to the well-established standard Lifshitz–Kosevich theory, the amplitude of the SdH oscillation decreases linearly with increasing temperature and persists up to a temperature of 150 K. Our results also show that the magnetoresistance (MR) in N-doped graphene increases with increasing temperature. Our results may be useful for the application of N-doped graphene in magnetic devices.