posted on 2021-07-13, 19:43authored byMaria Brzhezinskaya, Oleg Kononenko, Victor Matveev, Aleksandr Zotov, Igor I. Khodos, Vladimir Levashov, Vladimir Volkov, Sergey I. Bozhko, Sergey V. Chekmazov, Dmitry Roshchupkin
Because of their unique atomic structure,
2D materials
are able to create an up-to-date paradigm in fundamental science and
technology on the way to engineering the band structure and electronic
properties of materials on the nanoscale. One of the simplest methods
along this path is the superposition of several 2D nanomaterials while simultaneously specifying the twist angle between
adjacent layers (θ), which leads to the emergence of Moiré
superlattices. The key challenge in 2D nanoelectronics
is to obtain a nanomaterial with numerous Moiré superlattices
in addition to a high carrier mobility in a stable and easy-to-fabricate
material. Here, we demonstrate the possibility of synthesizing twisted
multilayer graphene (tMLG) with a number of monolayers NL = 40–250 and predefined narrow ranges of θ
= 3–8°, θ = 11–15°, and θ = 26–30°.
A 2D nature of the electron transport is observed
in the tMLG, and its carrier mobilities are close to those of twisted
bilayer graphene (tBLG) (with θ = 30°) between h-BN layers.
We demonstrate an undoubtful presence of numerous Moiré superlattices
simultaneously throughout the entire tMLG thickness, while the periods
of these superlattices are rather close to each other. This offers
a challenge of producing a next generation of devices for nanoelectronics,
twistronics, and neuromorphic computing for large data applications.