posted on 2017-05-25, 00:00authored byQian Wang, Xisheng Zhang, Zhiwen Jin, Jingru Zhang, Zhenfei Gao, Yongfang Li, Shengzhong Frank Liu
Parasitic absorption
by window layer, electrode layer, and interface
layer in the near ultraviolet (UV) region is no longer negligible
for high-efficiency perovskite solar cells. On the other hand, UV-induced
degradation is also a big component of cell instability. Herein, CsPbCl3:Mn-based quantum dots (QDs) are synthesized and applied onto
the front side of the perovskite solar cells as the energy-down-shift
(EDS) layer. It is found that with very high quantum yield (∼60%)
and larger Stokes shift (>200 nm), the CsPbCl3:Mn QDs
effectively
convert the normally wasted energy in the UV region (300–400
nm) into usable visible light at ∼590 nm for enhanced power
conversion efficiency (PCE). Meanwhile, conversion of the UV rays
eliminated a significant loss mechanism that deteriorates perovskite
stability. As a result, external quantum efficiency in the UV region
is significantly increased, leading to an increased short-circuit
current (3.77%) and PCE (3.34%). Furthermore, the stability of perovskite
solar cells has also been improved from 85% to 97% of their initial
efficiency after exposure in the UV region with 5 mW/cm2 intensity by 100 h. In parallel, the organic and silicon solar cells
coated by EDS QDs also both confirm the above conclusion with PCE
enhancements of 3.21% and 2.98%, respectively. These results suggest
that the CsPbCl3:Mn QDs play a significant role in improving
the efficiency and stability of photovoltaic devices. To our knowledge,
this is the first report about CsPbCl3:Mn QD-assisted perovskite
solar cells.