Single-walled carbon nanotube (SWCNT)
networks deposited from a purple single chirality (6,5) SWCNT aqueous
solution were electrically characterized as pure semiconductors based
on metal/semiconductor/metal Schottky contacts using both complex
instruments and a portable device. Both air-stable PMOS (p-type metal-oxide-semiconductor) and NMOS (n-type
metal-oxide-semiconductor, resembling amorphous silicon) thin film
transistors were fabricated on (6,5) SWCNT in large scale showing
the characteristics of fA off current and ION/IOFF ratio of >1 × 108. CMOS (complementary metal-oxide-semiconductor) SWCNT inverter was
demonstrated by wire-bonding PMOS (6,5) SWCNT TFT and NMOS (6,5) SWCNT
TFT together to achieve the voltage gain as large as 52.